| PART |
Description |
Maker |
| K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4 |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
64Mbit SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 1N4626 1N4110 1N4620 1N4624 1N4104 1N4627 1N4099 1 |
surface mount silicon Zener diodes 表面贴装硅稳压二极管
ZFKDSA 1.5C-5.0- 6 SO BN-GN
SPC 16/ 6-ST-10,16
GMSTB 2,5/ HC/ 3-GF-7.62
LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE
LOW LEVEL ZENER DIODES LOW CURRENT: 250A - LOW NOISE
LOW LEVEL ZENER DIODES LOW CURRENT: 250μA - LOW NOISE
|
Microsemi, Corp.
Knox SemiconductorInc
KNOX[Knox Semiconductor, Inc]
KNOX[Knox Semiconductor Inc]
|
| LM2902VD LM2902V LM2902 LM324A LM324 LM224 LM324AD |
QUAD DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS
From old datasheet system
Advanced LinCMOS(TM) Low-Noise Chopper-Stabilized Operational Amplifier 8-PDIP
Quad Low Power operational Amplifiers
QUAD OP-AMP, 10000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO14
|
ON Semi
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
|
| CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| ISL6566CR ISL6566IR ISL6566CRZ |
Single Output LDO, 500mA, Adj. (1.3 to 6.5V), Low Noise 8-SOIC -40 to 125
Dual Low-Noise Wide-Bandwidth Precision Amplifier 8-TSSOP -40 to 85
|
Intersil Corporation
|
| R261 |
Advanced Noise Reduction Solution for Voice Capture Devices
|
ON Semiconductor
|
| SA57000-XX |
CapFREE(TM) 150 mA, low-noise, low dropout regulator with thermal protection
CapFREEE 150 mA, low-noise, low dropout
|
Philips
|
| DDZ21 DDZ23 DDZ24C DDZ27D DDZ6V2B DDZ6V8C DDZ5V6B |
3.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Zener Diodes
SURFACE MOUNT PRECISION ZENER DIODE
LED 7-SEG .56 RED 632NM CC
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
